Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications

Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications

Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical charge of sensitive storage nodes drops, and...

Full description

Bibliographic Details
Main Authors: Pavan Kumar Mukku, Rohit Lorenzo
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Critical charge
double node upset (DNU)
ion track
PVT analysis
radiation hardening
sensitive node
Online Access:https://ieeexplore.ieee.org/document/10235989/

Internet

https://ieeexplore.ieee.org/document/10235989/

Similar Items