Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Abstract In this report, we locally modulate the doping type in the n-AlGaN layer by proposing n-AlGaN/p-AlGaN/n-AlGaN (NPN-AlGaN)-structured current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). After inserting a thin p-AlGaN layer into the n-AlGaN electron supp...

Full description

Bibliographic Details
Main Authors: Jiamang Che, Hua Shao, Jianquan Kou, Kangkai Tian, Chunshuang Chu, Xu Hou, Yonghui Zhang, Qian Sun, Zi-Hui Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-08-01
Series:Nanoscale Research Letters
Subjects:
DUV LED
Current spreading effect
Conduction band barrier height
External quantum efficiency
Wall-plug efficiency
Online Access:http://link.springer.com/article/10.1186/s11671-019-3078-8

Internet

http://link.springer.com/article/10.1186/s11671-019-3078-8

Similar Items