Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Abstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic laye...

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Bibliographic Details
Main Authors: Kangping Liu, Odile Cristini-Robbe, Omar Ibrahim Elmi, Shuang Long Wang, Bin Wei, Ingsong Yu, Xavier Portier, Fabrice Gourbilleau, Didier Stiévenard, Tao Xu
Format: Article
Language:English
Published: SpringerOpen 2019-10-01
Series:Nanoscale Research Letters
Subjects:
Surface passivation
Atomic layer deposition
Alumina layer
Structural/electrical properties
Silicon p-n junction
Online Access:http://link.springer.com/article/10.1186/s11671-019-3160-2

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http://link.springer.com/article/10.1186/s11671-019-3160-2

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