Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
Abstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic laye...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-10-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3160-2 |
| _version_ | 1797709146770898944 |
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| author | Kangping Liu Odile Cristini-Robbe Omar Ibrahim Elmi Shuang Long Wang Bin Wei Ingsong Yu Xavier Portier Fabrice Gourbilleau Didier Stiévenard Tao Xu |
| author_facet | Kangping Liu Odile Cristini-Robbe Omar Ibrahim Elmi Shuang Long Wang Bin Wei Ingsong Yu Xavier Portier Fabrice Gourbilleau Didier Stiévenard Tao Xu |
| author_sort | Kangping Liu |
| collection | DOAJ |
| description | Abstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced. |
| first_indexed | 2024-03-12T06:32:11Z |
| format | Article |
| id | doaj.art-8e7082a42d8c456aae0234a052efbd2f |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:32:11Z |
| publishDate | 2019-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-8e7082a42d8c456aae0234a052efbd2f2023-09-03T01:32:57ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-10-011411810.1186/s11671-019-3160-2Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon JunctionsKangping Liu0Odile Cristini-Robbe1Omar Ibrahim Elmi2Shuang Long Wang3Bin Wei4Ingsong Yu5Xavier Portier6Fabrice Gourbilleau7Didier Stiévenard8Tao Xu9Key Laboratory of Advanced Display and System Application, Shanghai UniversityPHLAM, UMR8523, Université de Lille 1Université de Djibouti, Groupe de Recherche PCM, Faculté des SciencesKey Laboratory of Advanced Display and System Application, Shanghai UniversityKey Laboratory of Advanced Display and System Application, Shanghai UniversityDepartment of Materials Science and Engineering, National Dong Hwa UniversityCIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRSCIMAP, Normandie Univ, ENSICAEN, UNICAEN, CEA, CNRSIEMN, UMR8520, Université de Lille 1Key Laboratory of Advanced Display and System Application, Shanghai UniversityAbstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.http://link.springer.com/article/10.1186/s11671-019-3160-2Surface passivationAtomic layer depositionAlumina layerStructural/electrical propertiesSilicon p-n junction |
| spellingShingle | Kangping Liu Odile Cristini-Robbe Omar Ibrahim Elmi Shuang Long Wang Bin Wei Ingsong Yu Xavier Portier Fabrice Gourbilleau Didier Stiévenard Tao Xu Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions Nanoscale Research Letters Surface passivation Atomic layer deposition Alumina layer Structural/electrical properties Silicon p-n junction |
| title | Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions |
| title_full | Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions |
| title_fullStr | Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions |
| title_full_unstemmed | Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions |
| title_short | Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions |
| title_sort | tunneling atomic layer deposited aluminum oxide a correlated structural electrical performance study for the surface passivation of silicon junctions |
| topic | Surface passivation Atomic layer deposition Alumina layer Structural/electrical properties Silicon p-n junction |
| url | http://link.springer.com/article/10.1186/s11671-019-3160-2 |
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