Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review

Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review

With transistors scaling down to 3 nm node and beyond, short channel effect (SCE) as well as power consumption dissipation present immense challenges for further scaling down of the transistor. Hence the Gate all around field effect transistor (GAA-FET) is proposed to replace the Fin field effect tr...

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Bibliographic Details
Main Authors: Laixiang Qin, Chunlai Li, Yiqun Wei, Guoqing Hu, Jingbiao Chen, Yi Li, Caixia Du, Zhangwei Xu, Xiumei Wang, Jin He
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Negative capacitance effect
short channel effect
subthreshold swing
power consumption dissipation
negative capacitance gate all around field effect transistor
Online Access:https://ieeexplore.ieee.org/document/10041137/

Internet

https://ieeexplore.ieee.org/document/10041137/

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