Parameter modulation on p-type doping of AlGaN nanowires

Parameter modulation on p-type doping of AlGaN nanowires

The p-type doping process during the growth of AlGaN nanowires directly influences the optoelectronic properties of the related devices. However, research on the p-type ionization mechanism in AlxGa1-xN nanowires remains limited. In this work, we utilize first principles calculations to investigate...

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Bibliographic Details
Main Authors: Yuyan Wang, Sihao Xia, Yu Diao, Hongkai Shi, Xian Wu, Yuting Dai, Caixia Kan, Daning Shi
Format: Article
Language:English
Published: Elsevier 2024-05-01
Series:Journal of Materials Research and Technology
Subjects:
AlxGa1-xN nanowires
p-type doping
Bandgap
Effective mass
Bond population
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785424009943

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http://www.sciencedirect.com/science/article/pii/S2238785424009943

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