Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering

Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering

Lack of transparent contacts has been a critical bottleneck for the two-dimensional Transition Metal Dichalcogenides (TMDs) Field Effect Transistors (FETs). In the absence of approaches to introduce physical doping without inducing crystal damage, charge transfer-based doping has been widely adopted...

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Bibliographic Details
Main Authors: Kuruva Hemanjaneyulu, Jeevesh Kumar, Utpreksh Patbhaje, Mayank Shrivastava
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MoSe₂
WSe₂
field effect transistors
2D materials
transition metal dichalcogenides
Online Access:https://ieeexplore.ieee.org/document/10382467/

Internet

https://ieeexplore.ieee.org/document/10382467/

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