Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering
Lack of transparent contacts has been a critical bottleneck for the two-dimensional Transition Metal Dichalcogenides (TMDs) Field Effect Transistors (FETs). In the absence of approaches to introduce physical doping without inducing crystal damage, charge transfer-based doping has been widely adopted...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10382467/ |
| _version_ | 1797338492153364480 |
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| author | Kuruva Hemanjaneyulu Jeevesh Kumar Utpreksh Patbhaje Mayank Shrivastava |
| author_facet | Kuruva Hemanjaneyulu Jeevesh Kumar Utpreksh Patbhaje Mayank Shrivastava |
| author_sort | Kuruva Hemanjaneyulu |
| collection | DOAJ |
| description | Lack of transparent contacts has been a critical bottleneck for the two-dimensional Transition Metal Dichalcogenides (TMDs) Field Effect Transistors (FETs). In the absence of approaches to introduce physical doping without inducing crystal damage, charge transfer-based doping has been widely adopted. This manuscript presents a unique charge transfer doping technique using potassium iodide (KI) solution for Selenium-based TMDs, which resulted in charge transfer/doping near the contact edges; however, unlike earlier reports, it doesn’t affect the channel region in the presence of the dopant (i.e., KI). Density functional theory (DFT) based computations are used to investigate these unique experimental observations. DFT calculations show the formation of unique mid-gap states and doping of the TMD region near the contact edge where both KI and Ni were present, which otherwise was missing in the channel region where only KI was present. |
| first_indexed | 2024-03-08T09:32:01Z |
| format | Article |
| id | doaj.art-8ed71026f89f4a41bc8ca999445126e6 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T09:32:01Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8ed71026f89f4a41bc8ca999445126e62024-01-31T00:00:30ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-0112465010.1109/JEDS.2023.334502010382467Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States EngineeringKuruva Hemanjaneyulu0https://orcid.org/0000-0002-1455-5563Jeevesh Kumar1https://orcid.org/0000-0001-6178-8434Utpreksh Patbhaje2https://orcid.org/0009-0000-7648-1080Mayank Shrivastava3https://orcid.org/0000-0003-1005-040XDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaLack of transparent contacts has been a critical bottleneck for the two-dimensional Transition Metal Dichalcogenides (TMDs) Field Effect Transistors (FETs). In the absence of approaches to introduce physical doping without inducing crystal damage, charge transfer-based doping has been widely adopted. This manuscript presents a unique charge transfer doping technique using potassium iodide (KI) solution for Selenium-based TMDs, which resulted in charge transfer/doping near the contact edges; however, unlike earlier reports, it doesn’t affect the channel region in the presence of the dopant (i.e., KI). Density functional theory (DFT) based computations are used to investigate these unique experimental observations. DFT calculations show the formation of unique mid-gap states and doping of the TMD region near the contact edge where both KI and Ni were present, which otherwise was missing in the channel region where only KI was present.https://ieeexplore.ieee.org/document/10382467/MoSe₂WSe₂field effect transistors2D materialstransition metal dichalcogenides |
| spellingShingle | Kuruva Hemanjaneyulu Jeevesh Kumar Utpreksh Patbhaje Mayank Shrivastava Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering IEEE Journal of the Electron Devices Society MoSe₂ WSe₂ field effect transistors 2D materials transition metal dichalcogenides |
| title | Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering |
| title_full | Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering |
| title_fullStr | Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering |
| title_full_unstemmed | Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering |
| title_short | Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering |
| title_sort | enhanced carrier injection across s d contacts in selenium based tmd fets using ki and metal induced gap states engineering |
| topic | MoSe₂ WSe₂ field effect transistors 2D materials transition metal dichalcogenides |
| url | https://ieeexplore.ieee.org/document/10382467/ |
| work_keys_str_mv | AT kuruvahemanjaneyulu enhancedcarrierinjectionacrosssdcontactsinseleniumbasedtmdfetsusingkiandmetalinducedgapstatesengineering AT jeeveshkumar enhancedcarrierinjectionacrosssdcontactsinseleniumbasedtmdfetsusingkiandmetalinducedgapstatesengineering AT utprekshpatbhaje enhancedcarrierinjectionacrosssdcontactsinseleniumbasedtmdfetsusingkiandmetalinducedgapstatesengineering AT mayankshrivastava enhancedcarrierinjectionacrosssdcontactsinseleniumbasedtmdfetsusingkiandmetalinducedgapstatesengineering |