Surface Passivation of Germanium with ALD Al<sub>2</sub>O<sub>3</sub>: Impact of Composition and Crystallinity of GeO<sub>x</sub> Interlayer

Surface Passivation of Germanium with ALD Al<sub>2</sub>O<sub>3</sub>: Impact of Composition and Crystallinity of GeO<sub>x</sub> Interlayer

Germanium is an excellent material candidate for various applications, such as field effect transistors and radiation detectors/multijunction solar cells, due to its high carrier mobilities and narrow bandgap, respectively. However, the efficient passivation of germanium surfaces remains challenging...

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Bibliographic Details
Main Authors: Joonas Isometsä, Zahra Jahanshah Rad, Tsun H. Fung, Hanchen Liu, Juha-Pekka Lehtiö, Toni P. Pasanen, Oskari Leiviskä, Mikko Miettinen, Pekka Laukkanen, Kalevi Kokko, Hele Savin, Ville Vähänissi
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Crystals
Subjects:
surface passivation
atomic layer deposition
aluminum oxide
ultrahigh vacuum
corona oxide characterization of semiconductors
quasi-steady-state microwave-detected photoconductance decay
Online Access:https://www.mdpi.com/2073-4352/13/4/667

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https://www.mdpi.com/2073-4352/13/4/667

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