Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (V<sub>TH</sub>)...

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Bibliographic Details
Main Authors: Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Micromachines
Subjects:
p-GaN gate HEMTs
TDGB
BTI
charge
Online Access:https://www.mdpi.com/2072-666X/14/5/1042

Internet

https://www.mdpi.com/2072-666X/14/5/1042

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