Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory
We demonstrate a novel concept for low power compute-in-memory applications in a room temperature fabricated ZnO/Ta<sub>2</sub>O<sub>5</sub> thin film transistor. By writing during the off-state, the device power consumption is reduced to nW despite a large L/W ratio. A thinn...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8834821/ |