Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory
We demonstrate a novel concept for low power compute-in-memory applications in a room temperature fabricated ZnO/Ta<sub>2</sub>O<sub>5</sub> thin film transistor. By writing during the off-state, the device power consumption is reduced to nW despite a large L/W ratio. A thinn...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8834821/ |
| _version_ | 1831644683106779136 |
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| author | Xiaoyao Song Ashwani Kumar Maria Merlyne De Souza |
| author_facet | Xiaoyao Song Ashwani Kumar Maria Merlyne De Souza |
| author_sort | Xiaoyao Song |
| collection | DOAJ |
| description | We demonstrate a novel concept for low power compute-in-memory applications in a room temperature fabricated ZnO/Ta<sub>2</sub>O<sub>5</sub> thin film transistor. By writing during the off-state, the device power consumption is reduced to nW despite a large L/W ratio. A thinner gate insulator thickness gives higher on/off ratio, nevertheless this reduces the retention time. The on/off ratio in the thicker oxide can be improved by asymmetric voltage pulses of higher magnitude in the off state without affecting power consumption. Benchmarked against other ReRAM devices, the device shows a competitive 8 nJ per transition, which allows a reduction in power consumption compared to a filamentary device. Such non-filamentary devices have closer similarity to biological synapses on account of slow operating speed. |
| first_indexed | 2024-12-19T13:22:00Z |
| format | Article |
| id | doaj.art-8f42dfb1c6d04b42a2c6fc9e84fec024 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-19T13:22:00Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8f42dfb1c6d04b42a2c6fc9e84fec0242022-12-21T20:19:40ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-0171232123810.1109/JEDS.2019.29410768834821Off-State Operation of a Three Terminal Ionic FET for Logic-in-MemoryXiaoyao Song0https://orcid.org/0000-0002-8647-4324Ashwani Kumar1https://orcid.org/0000-0002-8288-6401Maria Merlyne De Souza2https://orcid.org/0000-0002-7804-7154EEE Department, University of Sheffield, Sheffield, U.K.EEE Department, University of Sheffield, Sheffield, U.K.EEE Department, University of Sheffield, Sheffield, U.K.We demonstrate a novel concept for low power compute-in-memory applications in a room temperature fabricated ZnO/Ta<sub>2</sub>O<sub>5</sub> thin film transistor. By writing during the off-state, the device power consumption is reduced to nW despite a large L/W ratio. A thinner gate insulator thickness gives higher on/off ratio, nevertheless this reduces the retention time. The on/off ratio in the thicker oxide can be improved by asymmetric voltage pulses of higher magnitude in the off state without affecting power consumption. Benchmarked against other ReRAM devices, the device shows a competitive 8 nJ per transition, which allows a reduction in power consumption compared to a filamentary device. Such non-filamentary devices have closer similarity to biological synapses on account of slow operating speed.https://ieeexplore.ieee.org/document/8834821/Tantalum oxidezinc oxideoxygen vacanciesmemory TFTs and compute-in-memory |
| spellingShingle | Xiaoyao Song Ashwani Kumar Maria Merlyne De Souza Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory IEEE Journal of the Electron Devices Society Tantalum oxide zinc oxide oxygen vacancies memory TFTs and compute-in-memory |
| title | Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory |
| title_full | Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory |
| title_fullStr | Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory |
| title_full_unstemmed | Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory |
| title_short | Off-State Operation of a Three Terminal Ionic FET for Logic-in-Memory |
| title_sort | off state operation of a three terminal ionic fet for logic in memory |
| topic | Tantalum oxide zinc oxide oxygen vacancies memory TFTs and compute-in-memory |
| url | https://ieeexplore.ieee.org/document/8834821/ |
| work_keys_str_mv | AT xiaoyaosong offstateoperationofathreeterminalionicfetforlogicinmemory AT ashwanikumar offstateoperationofathreeterminalionicfetforlogicinmemory AT mariamerlynedesouza offstateoperationofathreeterminalionicfetforlogicinmemory |