Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes
The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2017-06-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300026 |