Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes
The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n...
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| Format: | Article |
| Language: | English |
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Pensoft Publishers
2017-06-01
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| Series: | Modern Electronic Materials |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300026 |
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| author | Noorah A. Al-Ahmadi Fadiah A. Ebrahim Hala A. Al-Jawhari Riaz H. Mari Mohamed Henini |
| author_facet | Noorah A. Al-Ahmadi Fadiah A. Ebrahim Hala A. Al-Jawhari Riaz H. Mari Mohamed Henini |
| author_sort | Noorah A. Al-Ahmadi |
| collection | DOAJ |
| description | The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n) and series resistance (RS) for each diode were evaluated using both thermionic emission (TE) theory and Cheung's method. Our experimental results showed that the sample with a moderate doping concentration of 3 × 1016 cm-3 has the best performance, including ideality factor of 1.25 and rectification ratio of 2.24 × 103 at room temperature. All samples showed an abnormal behavior of reducing ΦB and increasing n with increase of temperature. This behavior was attributed, in case of low concentration samples, to barrier inhomogeneity and was explained by assuming a Gaussian distribution of barrier heights at the interface. While for the heavily doped sample, such non-ideal manner was ascribed with tunneling through the field emission (FE) mechanism. |
| first_indexed | 2024-03-12T08:08:00Z |
| format | Article |
| id | doaj.art-8f533948d6344f7486f711b13c9a4e06 |
| institution | Directory Open Access Journal |
| issn | 2452-1779 |
| language | English |
| last_indexed | 2024-03-12T08:08:00Z |
| publishDate | 2017-06-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj.art-8f533948d6344f7486f711b13c9a4e062023-09-02T19:20:34ZengPensoft PublishersModern Electronic Materials2452-17792017-06-0132667110.1016/j.moem.2017.06.001Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodesNoorah A. Al-Ahmadi0Fadiah A. Ebrahim1Hala A. Al-Jawhari2Riaz H. Mari3Mohamed Henini4Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi ArabiaInstitute of Physics, University of Sindh, Jamshoro, PakistanSchool of Physics and Astronomy, University of Nottingham, NG7 2RD, UKThe effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K. Using three devices with three different doping levels, the barrier height (ΦB), ideality factor (n) and series resistance (RS) for each diode were evaluated using both thermionic emission (TE) theory and Cheung's method. Our experimental results showed that the sample with a moderate doping concentration of 3 × 1016 cm-3 has the best performance, including ideality factor of 1.25 and rectification ratio of 2.24 × 103 at room temperature. All samples showed an abnormal behavior of reducing ΦB and increasing n with increase of temperature. This behavior was attributed, in case of low concentration samples, to barrier inhomogeneity and was explained by assuming a Gaussian distribution of barrier heights at the interface. While for the heavily doped sample, such non-ideal manner was ascribed with tunneling through the field emission (FE) mechanism.http://www.sciencedirect.com/science/article/pii/S2452177917300026Schottky barrier heightDoping concentration effectCurrent–voltage characteristicsCheung's equationGaussian distribution of barrier heights |
| spellingShingle | Noorah A. Al-Ahmadi Fadiah A. Ebrahim Hala A. Al-Jawhari Riaz H. Mari Mohamed Henini Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes Modern Electronic Materials Schottky barrier height Doping concentration effect Current–voltage characteristics Cheung's equation Gaussian distribution of barrier heights |
| title | Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes |
| title_full | Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes |
| title_fullStr | Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes |
| title_full_unstemmed | Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes |
| title_short | Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes |
| title_sort | impact of doping on the performance of p type be doped al0 29 ga0 71as schottky diodes |
| topic | Schottky barrier height Doping concentration effect Current–voltage characteristics Cheung's equation Gaussian distribution of barrier heights |
| url | http://www.sciencedirect.com/science/article/pii/S2452177917300026 |
| work_keys_str_mv | AT noorahaalahmadi impactofdopingontheperformanceofptypebedopedal029ga071asschottkydiodes AT fadiahaebrahim impactofdopingontheperformanceofptypebedopedal029ga071asschottkydiodes AT halaaaljawhari impactofdopingontheperformanceofptypebedopedal029ga071asschottkydiodes AT riazhmari impactofdopingontheperformanceofptypebedopedal029ga071asschottkydiodes AT mohamedhenini impactofdopingontheperformanceofptypebedopedal029ga071asschottkydiodes |