Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Abstract A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler fabrication process. Devices with as t...

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Bibliographic Details
Main Authors: Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu
Format: Article
Language:English
Published: Wiley 2023-02-01
Series:Electronics Letters
Subjects:
nanofabrication
semiconductor device manufacture
silicon‐on‐insulator
transistors
Online Access:https://doi.org/10.1049/ell2.12740

Internet

https://doi.org/10.1049/ell2.12740

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