Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO<sub>2</sub> Multilayers

Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO<sub>2</sub> Multilayers

In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the...

Full description

Bibliographic Details
Main Authors: Juan Ramirez-Rios, Karla Esther González-Flores, José Juan Avilés-Bravo, Sergio Alfonso Pérez-García, Javier Flores-Méndez, Mario Moreno-Moreno, Alfredo Morales-Sánchez
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
resistive switching memory
conductive filaments
silicon nanocrystals
two-dimensional oxygen vacancy configuration
valence change memory
Online Access:https://www.mdpi.com/2079-4991/13/14/2124

Internet

https://www.mdpi.com/2079-4991/13/14/2124

Similar Items