Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
In this work, the influence of the acceptor-type trap on the threshold voltage and short-channel effect is analyzed and modeled for the short-channel GaN MOS-HEMT. Particularly, the analysis and modeling are carried out with the dependences of the traps’ ionization condition on the gate v...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9446477/ |