The role of oxygen vacancies on resistive switching properties of oxide materials
Tuning the level of oxygen vacancies in metal oxide materials is a promising approach to enhance resistive switching properties towards memory applications. To comprehensively understand the microstructure and oxygen vacancy migration mechanism of oxide materials, recent research in controlling the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIMS Press
2020-10-01
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| Series: | AIMS Materials Science |
| Subjects: | |
| Online Access: | http://www.aimspress.com/article/doi/10.3934/matersci.2020.5.665?viewType=HTML |