High quality GaN films on miscut (111) diamond substrates through non-c orientation suppression

High quality GaN films on miscut (111) diamond substrates through non-c orientation suppression

The GaN films are grown on 4° miscut to (110) and (100) orientation (111) diamond substrates by metal organic chemical vapor deposition respectively. The ordinary (111) diamond substrate is used as reference. The morphology and crystal quality of the three GaN films are characterized by atomic force...

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Bibliographic Details
Main Authors: Yuan Gao, Shengrui Xu, Hongchang Tao, Yachao Zhang, Jinfeng Zhang, Huake Su, Xiaomeng Fan, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: Elsevier 2023-04-01
Series:Results in Physics
Subjects:
GaN on diamond
Non-c orientation suppression
Miscut substrate
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723001614

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http://www.sciencedirect.com/science/article/pii/S2211379723001614

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