Low-energy Se ion implantation in MoS 2 monolayers

Low-energy Se ion implantation in MoS 2 monolayers

Abstract In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the im...

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Bibliographic Details
Main Authors: Minh N. Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan N. O’Connell, Quentin M. Ramasse, Ursel Bangert, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynal
Format: Article
Language:English
Published: Nature Portfolio 2022-06-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-022-00318-4

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https://doi.org/10.1038/s41699-022-00318-4

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