Interface-engineering enhanced light emission from Si/Ge quantum dots
Si quantum dots (QDs) have a significant improvement in luminous efficiency compared with bulk Si, achieved by alleviating the forbiddance of no-phonon Γ – Γ radiative transition determined by the law of momentum conservation. Two divergent mechanisms have been proposed to account for the breakdown...
| Váldodahkkit: | , , |
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| Materiálatiipa: | Artihkal |
| Giella: | English |
| Almmustuhtton: |
IOP Publishing
2020-01-01
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| Ráidu: | New Journal of Physics |
| Fáttát: | |
| Liŋkkat: | https://doi.org/10.1088/1367-2630/abafe7 |