Characterization of heterogeneous InP-on-Si optical modulators operating between 77 K and room temperature

Characterization of heterogeneous InP-on-Si optical modulators operating between 77 K and room temperature

Heterogeneous integration of InP modulators on a silicon photonic platform, fabricated by bonding III–V wafer on patterned silicon waveguides, are proved to work between 77 K and 295 K. The performance of modulators based on the Franz-Keldysh effect (bulk) and the quantum confined Stark effect (quan...

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Detaylı Bibliyografya
Asıl Yazarlar: Paolo Pintus, Zeyu Zhang, Sergio Pinna, Minh A. Tran, Aditya Jain, MJ Kennedy, Leonardo Ranzani, Mohammad Soltani, John E. Bowers
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: AIP Publishing LLC 2019-10-01
Seri Bilgileri:APL Photonics
Online Erişim:http://dx.doi.org/10.1063/1.5120046

Internet

http://dx.doi.org/10.1063/1.5120046

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