Characterization of heterogeneous InP-on-Si optical modulators operating between 77 K and room temperature

Characterization of heterogeneous InP-on-Si optical modulators operating between 77 K and room temperature

Heterogeneous integration of InP modulators on a silicon photonic platform, fabricated by bonding III–V wafer on patterned silicon waveguides, are proved to work between 77 K and 295 K. The performance of modulators based on the Franz-Keldysh effect (bulk) and the quantum confined Stark effect (quan...

Full description

Bibliographic Details
Main Authors:	Paolo Pintus, Zeyu Zhang, Sergio Pinna, Minh A. Tran, Aditya Jain, MJ Kennedy, Leonardo Ranzani, Mohammad Soltani, John E. Bowers
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-10-01
Series:	APL Photonics
Online Access:	http://dx.doi.org/10.1063/1.5120046

Similar Items

67.5% Efficient InP-Based Laser Power Converters at 1470 nm at 77 K
by: Simon Fafard, et al.
Published: (2024-01-01)

Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
by: Jiajie Lin, et al.
Published: (2020-05-01)

Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration
by: Minh A. Tran, et al.
Published: (2019-11-01)

NONLINEAR OPTICAL-ABSORPTION IN BULK GALNAS/INP AT ROOM-TEMPERATURE
by: Fox, A, et al.
Published: (1987)

Hybrid InP and SiN integration of an octave-spanning frequency comb
by: Travis C. Briles, et al.
Published: (2021-02-01)

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
by: Silu Yan, et al.
Published: (2022-03-01)

Dielectric resonator to measure surface resistance of accelerator components at room temperature and 77 K
by: Kristóf Brunner, et al.
Published: (2023-08-01)

Structural heterogeneity of microporous materials from nitrogen adsorption at 77 K
by: Gil, A., et al.
Published: (2000-08-01)

Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on Si
by: Isabella Peracchi, et al.
Published: (2023-07-01)

Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes
by: Thi Kim Oanh Vu, et al.
Published: (2022-07-01)

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
by: Soresi Stefano, et al.
Published: (2023-01-01)

DEFECT CHARACTERIZATION IN MOCVD INP/GAINAS/INP LAYERS
by: Jin, N, et al.
Published: (1993)

Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration
by: Fan, J., et al.
Published: (2016)

Room temperature continuous frequency tuning InGaAs/InP single-photon detector
by: Huan Chen, et al.
Published: (2018-07-01)

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate
by: Kazior, T. E., et al.
Published: (2013)

First operation of undoped CsI directly coupled with SiPMs at 77 K
by: Keyu Ding, et al.
Published: (2022-04-01)

Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers
by: David Coenen, et al.
Published: (2023-02-01)

Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser
by: Youwen Fan, et al.
Published: (2016-01-01)

Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands
by: Han, Y, et al.
Published: (2018)

FORTRAN 77 with applications to science and engineering /
by: Jain, R. K. (Ravinder Kumar), 1935-, et al.
Published: (1988)

PRESSURE-INDUCED CHANGES IN THE EFFECTIVE MASS OF ELECTRONS IN GAAS, INP AND (GAIN)(ASP)/INP
by: Adams, A, et al.
Published: (1986)

InP and InGaAs grown on InP substrate by molecular beam epitaxy
by: Yu Hailong, et al.
Published: (2022-01-01)

The many rooms of Holland House
by: Bowers, W
Published: (2016)

Submicron-Size Emitters of the 1.2–1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate
by: Ivan Melnichenko, et al.
Published: (2022-11-01)

Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons
by: Jianbin Kang, et al.
Published: (2022-12-01)

Demonstration of InP-on-Si Self-Pulsating DFB Laser Diodes for Optical Microwave Generation
by: Keqi Ma, et al.
Published: (2017-01-01)

Euromeas - 77
by: 9327 European Conference on Precise electrical measurement 1977

AIRPORT '77 /
by: Scheff, Michael, et al.
Published: (1977)

Fortran 77 /
by: 171669 Bezner, Hart C.
Published: (1989)

FORTRAN 77 /
by: 403469 Katzan, Harry
Published: (1978)

Fortran 77 /
by: 310605 Monro, Donald Martin
Published: (1982)

Ports '77 /
Published: (1977)

P77
by: N. Litviakov, et al.
Published: (2015-11-01)

Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
by: Lin, Yiding
Published: (2015)

New PMMA-InP/ZnS nanohybrid coatings for improving the performance of c-Si photovoltaic cells
by: Althumairi Nouf Ahmed, et al.
Published: (2024-06-01)

Fortran 77 : language and style : a structured guide to Fortran 77 /
by: 448399 Merchant, Michael J.
Published: (1981)

Hydrogen degradation on InP HEMTs
by: Blanchard, Roxann Russell
Published: (2013)

High-quality InP on GaAs
by: Quitoriano, Nathaniel Joseph
Published: (2007)

ELECTRON-PARAMAGNETIC RESONANCE OF INP-CO
by: Baker, J, et al.
Published: (1981)

DOUBLE SOURCE PHOTOCONDUCTIVITY OF INP-FE
by: Fung, S, et al.
Published: (1985)