Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers

Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers

Double buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial t...

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Bibliographic Details
Main Authors: Kyoung-Ho Kim, Yun-Ji Shin, Seong-Min Jeong, Heesoo Lee, Si-Young Bae
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
Ga<sub>2</sub>O<sub>3</sub>
mist CVD
doping
buffer layer
mobility
Online Access:https://www.mdpi.com/2079-4991/14/2/178

Internet

https://www.mdpi.com/2079-4991/14/2/178

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