Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
Double buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial t...
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MDPI AG
2024-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/2/178 |
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| author | Kyoung-Ho Kim Yun-Ji Shin Seong-Min Jeong Heesoo Lee Si-Young Bae |
| author_facet | Kyoung-Ho Kim Yun-Ji Shin Seong-Min Jeong Heesoo Lee Si-Young Bae |
| author_sort | Kyoung-Ho Kim |
| collection | DOAJ |
| description | Double buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700–800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-Ga<sub>2</sub>O<sub>3</sub> thin film through local lateral overgrowth. The electron mobility of the Sn-Ga<sub>2</sub>O<sub>3</sub> thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga<sub>2</sub>O<sub>3</sub> semiconductor devices within a shorter processing time. |
| first_indexed | 2024-03-08T10:39:30Z |
| format | Article |
| id | doaj.art-8fce44a3d49e460fb21c6dd10c117346 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-08T10:39:30Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-8fce44a3d49e460fb21c6dd10c1173462024-01-26T17:58:28ZengMDPI AGNanomaterials2079-49912024-01-0114217810.3390/nano14020178Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer LayersKyoung-Ho Kim0Yun-Ji Shin1Seong-Min Jeong2Heesoo Lee3Si-Young Bae4Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSchool of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaDouble buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700–800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-Ga<sub>2</sub>O<sub>3</sub> thin film through local lateral overgrowth. The electron mobility of the Sn-Ga<sub>2</sub>O<sub>3</sub> thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga<sub>2</sub>O<sub>3</sub> semiconductor devices within a shorter processing time.https://www.mdpi.com/2079-4991/14/2/178Ga<sub>2</sub>O<sub>3</sub>mist CVDdopingbuffer layermobility |
| spellingShingle | Kyoung-Ho Kim Yun-Ji Shin Seong-Min Jeong Heesoo Lee Si-Young Bae Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers Nanomaterials Ga<sub>2</sub>O<sub>3</sub> mist CVD doping buffer layer mobility |
| title | Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers |
| title_full | Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers |
| title_fullStr | Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers |
| title_full_unstemmed | Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers |
| title_short | Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers |
| title_sort | controlled crystallinity of a sn doped α ga sub 2 sub o sub 3 sub epilayer using rapidly annealed double buffer layers |
| topic | Ga<sub>2</sub>O<sub>3</sub> mist CVD doping buffer layer mobility |
| url | https://www.mdpi.com/2079-4991/14/2/178 |
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