Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers

Double buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial t...

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Main Authors: Kyoung-Ho Kim, Yun-Ji Shin, Seong-Min Jeong, Heesoo Lee, Si-Young Bae
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/14/2/178
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author Kyoung-Ho Kim
Yun-Ji Shin
Seong-Min Jeong
Heesoo Lee
Si-Young Bae
author_facet Kyoung-Ho Kim
Yun-Ji Shin
Seong-Min Jeong
Heesoo Lee
Si-Young Bae
author_sort Kyoung-Ho Kim
collection DOAJ
description Double buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700–800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-Ga<sub>2</sub>O<sub>3</sub> thin film through local lateral overgrowth. The electron mobility of the Sn-Ga<sub>2</sub>O<sub>3</sub> thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga<sub>2</sub>O<sub>3</sub> semiconductor devices within a shorter processing time.
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spelling doaj.art-8fce44a3d49e460fb21c6dd10c1173462024-01-26T17:58:28ZengMDPI AGNanomaterials2079-49912024-01-0114217810.3390/nano14020178Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer LayersKyoung-Ho Kim0Yun-Ji Shin1Seong-Min Jeong2Heesoo Lee3Si-Young Bae4Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSchool of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaDouble buffer layers composed of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> structures were employed to grow a Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the crystal quality of the upper-grown Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> thin films by blocking dislocation generated by the substrates. Rapid thermal annealing was conducted for the double buffer layers at phase transition temperatures of 700–800 °C. The slight mixing of κ and β phases further improved the crystallinity of the grown Sn-Ga<sub>2</sub>O<sub>3</sub> thin film through local lateral overgrowth. The electron mobility of the Sn-Ga<sub>2</sub>O<sub>3</sub> thin films was also significantly improved due to the smoothened interface and the diffusion of Al. Therefore, rapid thermal annealing with the double buffer layer proved advantageous in achieving strong electrical properties for Ga<sub>2</sub>O<sub>3</sub> semiconductor devices within a shorter processing time.https://www.mdpi.com/2079-4991/14/2/178Ga<sub>2</sub>O<sub>3</sub>mist CVDdopingbuffer layermobility
spellingShingle Kyoung-Ho Kim
Yun-Ji Shin
Seong-Min Jeong
Heesoo Lee
Si-Young Bae
Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
Nanomaterials
Ga<sub>2</sub>O<sub>3</sub>
mist CVD
doping
buffer layer
mobility
title Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
title_full Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
title_fullStr Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
title_full_unstemmed Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
title_short Controlled Crystallinity of a Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Epilayer Using Rapidly Annealed Double Buffer Layers
title_sort controlled crystallinity of a sn doped α ga sub 2 sub o sub 3 sub epilayer using rapidly annealed double buffer layers
topic Ga<sub>2</sub>O<sub>3</sub>
mist CVD
doping
buffer layer
mobility
url https://www.mdpi.com/2079-4991/14/2/178
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AT seongminjeong controlledcrystallinityofasndopedagasub2subosub3subepilayerusingrapidlyannealeddoublebufferlayers
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