Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Abstract Developing Ohmic contact systems or achieving low contact resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX2N4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni,...

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Bibliographic Details
Main Authors: Yu Shu, Yongqian Liu, Zhou Cui, Rui Xiong, Yinggan Zhang, Chao Xu, Jingying Zheng, Cuilian Wen, Bo Wu, Baisheng Sa
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
fermi level pinning
field‐effect transistors
metal–semiconductor contacts
Ohmic contact
Schottky barrier
Online Access:https://doi.org/10.1002/aelm.202201056

Internet

https://doi.org/10.1002/aelm.202201056

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