Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering
We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9946384/ |
| _version_ | 1811177620889403392 |
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| author | Giichiro Uchida Kenta Nagai Ayaka Wakana Yumiko Ikebe |
| author_facet | Giichiro Uchida Kenta Nagai Ayaka Wakana Yumiko Ikebe |
| author_sort | Giichiro Uchida |
| collection | DOAJ |
| description | We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm<sup>2</sup> (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size of the nanocrystalline grains increased from 100 to 307 nm when the RF input power for plasma production was increased from 11.8 W/cm<sup>2</sup> (60 W) to 17.7 W/cm<sup>2</sup> (90 W). In the developed narrow-gap plasma process at sub-Torr pressures, nanocrystalline Ge films were successfully fabricated on Cu substrates at low temperatures, without the substrate being heated. However, when annealing was conducted under an N<sub>2</sub> atmosphere, which is the conventional method to induce solid-phase crystallization, the amorphous Ge layer on a Cu substrate changed to a Cu<sub>3</sub>Ge crystal layer through interdiffusion of Ge and Cu atoms at 400–500 °C. |
| first_indexed | 2024-04-11T06:04:20Z |
| format | Article |
| id | doaj.art-8fe2579872d64889bbc1495e2118f6ab |
| institution | Directory Open Access Journal |
| issn | 2644-1292 |
| language | English |
| last_indexed | 2024-04-11T06:04:20Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Nanotechnology |
| spelling | doaj.art-8fe2579872d64889bbc1495e2118f6ab2022-12-22T04:41:32ZengIEEEIEEE Open Journal of Nanotechnology2644-12922022-01-01315315810.1109/OJNANO.2022.32214629946384Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma SputteringGiichiro Uchida0https://orcid.org/0000-0002-0331-0472Kenta Nagai1Ayaka Wakana2Yumiko Ikebe3https://orcid.org/0000-0001-6611-6012Faculty of Science and Technology, Meijo University, Nagoya, JapanFaculty of Science and Technology, Meijo University, Nagoya, JapanFaculty of Science and Technology, Meijo University, Nagoya, JapanFaculty of Science and Technology, Meijo University, Nagoya, JapanWe fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm<sup>2</sup> (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size of the nanocrystalline grains increased from 100 to 307 nm when the RF input power for plasma production was increased from 11.8 W/cm<sup>2</sup> (60 W) to 17.7 W/cm<sup>2</sup> (90 W). In the developed narrow-gap plasma process at sub-Torr pressures, nanocrystalline Ge films were successfully fabricated on Cu substrates at low temperatures, without the substrate being heated. However, when annealing was conducted under an N<sub>2</sub> atmosphere, which is the conventional method to induce solid-phase crystallization, the amorphous Ge layer on a Cu substrate changed to a Cu<sub>3</sub>Ge crystal layer through interdiffusion of Ge and Cu atoms at 400–500 °C.https://ieeexplore.ieee.org/document/9946384/Plasma applicationsplasma controlsemiconductor filmssputteringgermaniumgermanium alloys |
| spellingShingle | Giichiro Uchida Kenta Nagai Ayaka Wakana Yumiko Ikebe Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering IEEE Open Journal of Nanotechnology Plasma applications plasma control semiconductor films sputtering germanium germanium alloys |
| title | Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering |
| title_full | Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering |
| title_fullStr | Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering |
| title_full_unstemmed | Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering |
| title_short | Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering |
| title_sort | low temperature and high speed fabrication of nanocrystalline ge films on cu substrates using sub torr pressure plasma sputtering |
| topic | Plasma applications plasma control semiconductor films sputtering germanium germanium alloys |
| url | https://ieeexplore.ieee.org/document/9946384/ |
| work_keys_str_mv | AT giichirouchida lowtemperatureandhighspeedfabricationofnanocrystallinegefilmsoncusubstratesusingsubtorrpressureplasmasputtering AT kentanagai lowtemperatureandhighspeedfabricationofnanocrystallinegefilmsoncusubstratesusingsubtorrpressureplasmasputtering AT ayakawakana lowtemperatureandhighspeedfabricationofnanocrystallinegefilmsoncusubstratesusingsubtorrpressureplasmasputtering AT yumikoikebe lowtemperatureandhighspeedfabricationofnanocrystallinegefilmsoncusubstratesusingsubtorrpressureplasmasputtering |