Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confi...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922950 |