Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confi...

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Bibliographic Details
Main Authors:	Y. C. Chang, A. J. Robson, S. Harrison, Q. D. Zhuang, M. Hayne
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2015-06-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4922950

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