Revisiting the van der Waals Epitaxy in the Case of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films on Dissimilar Substrates

Revisiting the van der Waals Epitaxy in the Case of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films on Dissimilar Substrates

Ultrathin films of the ternary topological insulator (Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><mn>0.4</mn></mrow></msub></semantics...

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Bibliographic Details
Main Authors: Liesbeth Mulder, Daan H. Wielens, Yorick A. Birkhölzer, Alexander Brinkman, Omar Concepción
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Nanomaterials
Subjects:
thin films
topological insulators
molecular beam epitaxy
van der Waals epitaxy
(Bi<sub>1−<i>x</i></sub>Sb<i><sub>x</sub></i>)<sub>2</sub>Te<sub>3</sub>
Online Access:https://www.mdpi.com/2079-4991/12/11/1790

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https://www.mdpi.com/2079-4991/12/11/1790

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