Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation

Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation

Effects of carbon implantation (C-imp) on the contact characteristics of Ti/Ge contact were investigated. The C-imp into Ti/Ge system was developed to reduce severe Fermi-level pinning (FLP) and to improve the thermal stability of Ti/Ge contact. The current density (<i>J</i>)-voltage (&l...

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Bibliographic Details
Main Authors: Iksoo Park, Donghun Lee, Bo Jin, Jungsik Kim, Jeong-Soo Lee
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Micromachines
Subjects:
MS contact
fermi-level pinning
titanium
germanide
carbon
implantation
Online Access:https://www.mdpi.com/2072-666X/13/1/108

Internet

https://www.mdpi.com/2072-666X/13/1/108

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