The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and pr...

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Bibliographic Details
Main Authors: I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2022-01-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
hemt
gaas
proton fluence
displacement effects
nonionizing energy loss
simulation
Online Access:https://doklady.bsuir.by/jour/article/view/3250

Internet

https://doklady.bsuir.by/jour/article/view/3250

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