Relationship between mobility and strain in CVD graphene on h-BN
This study examines the relationship between the electrical properties and Raman spectra of field effect transistors (FETs) produced using chemical vapor deposited (CVD) graphene transferred onto hexagonal boron nitride (h-BN) structures. Carrier mobility values were calculated based on the electric...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0019621 |