Improving Performance of Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MIS HEMTs via In Situ N<sub>2</sub> Plasma Annealing

Improving Performance of Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MIS HEMTs via In Situ N<sub>2</sub> Plasma Annealing

A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al<sub>2</sub>O<sub>3</sub>/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasm...

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Bibliographic Details
Main Authors: Mengyuan Sun, Luyu Wang, Penghao Zhang, Kun Chen
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Micromachines
Subjects:
fully recessed-gate MIS HEMTs
AlN film
plasma annealing
threshold voltage
Online Access:https://www.mdpi.com/2072-666X/14/6/1100

Internet

https://www.mdpi.com/2072-666X/14/6/1100

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