A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-s...

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Bibliographic Details
Main Authors: Ivan Rodrigo Kaufmann, Onur Zerey, Thorsten Meyers, Julia Reker, Fábio Vidor, Ulrich Hilleringmann
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
Subjects:
thin film transistors
flexible electronics
zinc oxide nanoparticles
metal-semiconductor-metal
Schottky contact
Schottky barrier height
Online Access:https://www.mdpi.com/2079-4991/11/5/1188

Internet

https://www.mdpi.com/2079-4991/11/5/1188

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