Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

In this work, we successfully demonstrated In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm...

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Bibliographic Details
Main Authors: Seung Heon Shin, Jae-Phil Shim, Hyunchul Jang, Jae-Hyung Jang
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Micromachines
Subjects:
mHEMT
HEMT
InAs HEMT
InGaAs HEMT
Mo-based Ohmic contact
In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As composite channel
Online Access:https://www.mdpi.com/2072-666X/14/1/56

Internet

https://www.mdpi.com/2072-666X/14/1/56

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