APA (7th ed.) Citation

Shin, S. H., Shim, J., Jang, H., & Jang, J. (2022). Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate. MDPI AG.

Chicago Style (17th ed.) Citation

Shin, Seung Heon, Jae-Phil Shim, Hyunchul Jang, and Jae-Hyung Jang. Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate. MDPI AG, 2022.

MLA (9th ed.) Citation

Shin, Seung Heon, et al. Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate. MDPI AG, 2022.

Warning: These citations may not always be 100% accurate.