Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

In this work, we successfully demonstrated In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm...

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Bibliographic Details
Main Authors:	Seung Heon Shin, Jae-Phil Shim, Hyunchul Jang, Jae-Hyung Jang
Format:	Article
Language:	English
Published:	MDPI AG 2022-12-01
Series:	Micromachines
Subjects:	mHEMT HEMT InAs HEMT InGaAs HEMT Mo-based Ohmic contact In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As composite channel
Online Access:	https://www.mdpi.com/2072-666X/14/1/56

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