Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and <it>in situ </it>RHEED

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and <it>in situ </it>RHEED

<p>Abstract</p> <p>The Si(001) surface deoxidized by short annealing at <it>T </it>~ 925&#176;C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energ...

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Hlavní autoři: Arapkina Larisa, Yuryev Vladimir, Chizh Kirill, Shevlyuga Vladimir, Storojevyh Mikhail, Krylova Lyudmila
Médium: Článek
Jazyk:English
Vydáno: SpringerOpen 2011-01-01
Edice:Nanoscale Research Letters
Témata:
Silicon
Surface reconstruction
Scanning tunnelling microscopy
Reflected high energy electron diffraction
Clean surface preparation
On-line přístup:http://www.nanoscalereslett.com/content/6/1/218

Internet

http://www.nanoscalereslett.com/content/6/1/218

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