Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films

Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cy...

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Main Authors: Sung Yeon Ryu, Hee Ju Yun, Min Hwan Lee, Byung Joon Choi
Format: Article
Language:English
Published: Polish Academy of Sciences 2021-09-01
Series:Archives of Metallurgy and Materials
Subjects:
Online Access:https://journals.pan.pl/Content/119248/PDF/AMM-2021-3-17-Byung%20Joon%20Choi.pdf
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author Sung Yeon Ryu
Hee Ju Yun
Min Hwan Lee
Byung Joon Choi
author_facet Sung Yeon Ryu
Hee Ju Yun
Min Hwan Lee
Byung Joon Choi
author_sort Sung Yeon Ryu
collection DOAJ
description Gadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.
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spelling doaj.art-919e40078c414600bb6f9dcb378ac66e2022-12-22T02:49:18ZengPolish Academy of SciencesArchives of Metallurgy and Materials2300-19092021-09-01vol. 66No 3755758https://doi.org/10.24425/amm.2021.136375Growth Temperature Effect of Atomic-Layer-Deposited GdOx FilmsSung Yeon Ryu0Hee Ju Yun1Min Hwan Lee2Byung Joon Choi3https://orcid.org/0000-0003-1920-8162Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, KoreaSeoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, KoreaUniversity of California Merced, Department of Mechanical Engineering, Merced, California, USASeoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, KoreaGadolinium oxide (Gd2O3) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdOx thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdOx film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdOx thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdOx film.https://journals.pan.pl/Content/119248/PDF/AMM-2021-3-17-Byung%20Joon%20Choi.pdfgadolinium oxide (gd2o3)rare-earth oxideatomic layer depositionhydrophobicityelectrical property
spellingShingle Sung Yeon Ryu
Hee Ju Yun
Min Hwan Lee
Byung Joon Choi
Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
Archives of Metallurgy and Materials
gadolinium oxide (gd2o3)
rare-earth oxide
atomic layer deposition
hydrophobicity
electrical property
title Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
title_full Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
title_fullStr Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
title_full_unstemmed Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
title_short Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films
title_sort growth temperature effect of atomic layer deposited gdox films
topic gadolinium oxide (gd2o3)
rare-earth oxide
atomic layer deposition
hydrophobicity
electrical property
url https://journals.pan.pl/Content/119248/PDF/AMM-2021-3-17-Byung%20Joon%20Choi.pdf
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AT heejuyun growthtemperatureeffectofatomiclayerdepositedgdoxfilms
AT minhwanlee growthtemperatureeffectofatomiclayerdepositedgdoxfilms
AT byungjoonchoi growthtemperatureeffectofatomiclayerdepositedgdoxfilms