Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

We show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial lay...

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Bibliographic Details
Main Authors: J Růžička, O Caha, V Holý, H Steiner, V Volobuiev, A Ney, G Bauer, T Duchoň, K Veltruská, I Khalakhan, V Matolín, E F Schwier, H Iwasawa, K Shimada, G Springholz
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
topological insulators
thin layers
EXAFS
ARPES
61.05.C-
68.55.-a
Online Access:https://doi.org/10.1088/1367-2630/17/1/013028

Internet

https://doi.org/10.1088/1367-2630/17/1/013028

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