Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers
We show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial lay...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2015-01-01
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| Series: | New Journal of Physics |
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| Online Access: | https://doi.org/10.1088/1367-2630/17/1/013028 |
| _version_ | 1797751242210934784 |
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| author | J Růžička O Caha V Holý H Steiner V Volobuiev A Ney G Bauer T Duchoň K Veltruská I Khalakhan V Matolín E F Schwier H Iwasawa K Shimada G Springholz |
| author_facet | J Růžička O Caha V Holý H Steiner V Volobuiev A Ney G Bauer T Duchoň K Veltruská I Khalakhan V Matolín E F Schwier H Iwasawa K Shimada G Springholz |
| author_sort | J Růžička |
| collection | DOAJ |
| description | We show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers with Mn concentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c -axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the Mn K -edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers. |
| first_indexed | 2024-03-12T16:45:43Z |
| format | Article |
| id | doaj.art-919ec26463e04d829dd39fe89eb9d985 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:45:43Z |
| publishDate | 2015-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-919ec26463e04d829dd39fe89eb9d9852023-08-08T14:15:38ZengIOP PublishingNew Journal of Physics1367-26302015-01-0117101302810.1088/1367-2630/17/1/013028Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layersJ Růžička0O Caha1V Holý2H Steiner3V Volobuiev4A Ney5G Bauer6T Duchoň7K Veltruská8I Khalakhan9V Matolín10E F Schwier11H Iwasawa12K Shimada13G Springholz14CEITEC, Masaryk University , Kotlářská 2, 61137 Brno, Czech Republic; Department of Condensed Matter Physics, Faculty of Science, Masaryk University , Kotlářská 2, 61137 Brno, Czech RepublicCEITEC, Masaryk University , Kotlářská 2, 61137 Brno, Czech Republic; Department of Condensed Matter Physics, Faculty of Science, Masaryk University , Kotlářská 2, 61137 Brno, Czech RepublicDepartment of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague , Ke Karlovu 5, 12116 Praha, Czech RepublicInstitut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität , Altenbergerstr. 69, 4040 Linz, AustriaInstitut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität , Altenbergerstr. 69, 4040 Linz, AustriaInstitut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität , Altenbergerstr. 69, 4040 Linz, AustriaInstitut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität , Altenbergerstr. 69, 4040 Linz, AustriaDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague , V Holešovičkách 2, 18000 Praha, Czech RepublicDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague , V Holešovičkách 2, 18000 Praha, Czech RepublicDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague , V Holešovičkách 2, 18000 Praha, Czech RepublicDepartment of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague , V Holešovičkách 2, 18000 Praha, Czech RepublicHiroshima Synchrotron Radiation Center, Hiroshima University Kagamiyama 2-313 , Higashi-Hiroshima, Hiroshima 739-0046, JapanHiroshima Synchrotron Radiation Center, Hiroshima University Kagamiyama 2-313 , Higashi-Hiroshima, Hiroshima 739-0046, JapanHiroshima Synchrotron Radiation Center, Hiroshima University Kagamiyama 2-313 , Higashi-Hiroshima, Hiroshima 739-0046, JapanInstitut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität , Altenbergerstr. 69, 4040 Linz, AustriaWe show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers with Mn concentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c -axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the Mn K -edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.https://doi.org/10.1088/1367-2630/17/1/013028topological insulatorsthin layersEXAFSARPES61.05.C-68.55.-a |
| spellingShingle | J Růžička O Caha V Holý H Steiner V Volobuiev A Ney G Bauer T Duchoň K Veltruská I Khalakhan V Matolín E F Schwier H Iwasawa K Shimada G Springholz Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers New Journal of Physics topological insulators thin layers EXAFS ARPES 61.05.C- 68.55.-a |
| title | Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers |
| title_full | Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers |
| title_fullStr | Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers |
| title_full_unstemmed | Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers |
| title_short | Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers |
| title_sort | structural and electronic properties of manganese doped bi2te3 epitaxial layers |
| topic | topological insulators thin layers EXAFS ARPES 61.05.C- 68.55.-a |
| url | https://doi.org/10.1088/1367-2630/17/1/013028 |
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