Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Monolayer (ML) transition-metal dichalcogenides (TMDs) have attracted a lot of research interest in recent years due to their many interesting properties as well as their application promises. Depending on the specific combinations of metals (e.g., Mo and W) with chalcogen elements (e.g., S, Se, and...

Full description

Bibliographic Details
Main Authors: Junqiu Zhang, Yipu Xia, Zhoubin Yu, Xingyu Yue, Yuanjun Jin, Mengfei Yuan, Yue Feng, Bin Li, Bo Wang, Wingkin Ho, Chang Liu, Hu Xu, Chuanhong Jin, Maohai Xie
Format: Article
Language:English
Published: AIP Publishing LLC 2023-07-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0152247

Internet

http://dx.doi.org/10.1063/5.0152247

Similar Items