Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during capping and their relation to different growth condit...

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Bibliographic Details
Main Authors: Nazaret Ruiz, Daniel Fernandez, Esperanza Luna, Lazar Stanojević, Teresa Ben, Sara Flores, Verónica Braza, Alejandro Gallego-Carro, Guillermo Bárcena-González, Andres Yañez, José María Ulloa, David González
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Nanomaterials
Subjects:
InAs QDs
AlAs capping
STEM
growth rate control
Online Access:https://www.mdpi.com/2079-4991/12/14/2504

Internet

https://www.mdpi.com/2079-4991/12/14/2504

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