SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS
Influence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2015-04-01
|
| Series: | Pribory i Metody Izmerenij |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/117 |