SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS

SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS

Influence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman...

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Bibliografiska uppgifter
Huvudupphovsmän: A. V. Mudryi, F. Mofidnahai, A. V. Karotki, A. V. Dvurechensky, Zh. V. Smagina, V. A. Volodin, P. L. Novikov
Materialtyp: Artikel
Språk:English
Publicerad: Belarusian National Technical University 2015-04-01
Serie:Приборы и методы измерений
Ämnen:
si/ge nanostructures
ge quantum dots
raman scattering
luminescence
internal strains
Länkar:https://pimi.bntu.by/jour/article/view/117

Internet

https://pimi.bntu.by/jour/article/view/117

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