Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account
This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the wavefo...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/14/9/2372 |