Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation

Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation

We report p-GaN passivation via hydrogen plasma used to create current blocking regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 × 650 μm<sup>2</sup>. The CBRs are created before mesa etching in two variants: underneath the opaque metal p-pad and both underneath t...

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Bibliographic Details
Main Authors: Pavel Kirilenko, Cesur Altinkaya, Daisuke Iida, Kazuhiro Ohkawa
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
Subjects:
InGaN
LED
current blocking layer
hydrogen passivation
injection efficiency
light extraction efficiency
Online Access:https://www.mdpi.com/2073-4352/12/12/1733

Internet

https://www.mdpi.com/2073-4352/12/12/1733

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