Strain Measurement in Single Crystals by 4D-ED

Strain Measurement in Single Crystals by 4D-ED

A new method is presented to measure strain over a large area of a single crystal. The 4D-ED data are collected by recording a 2D diffraction pattern at each position in the 2D area of the TEM lamella scanned by the electron beam of STEM. Data processing is completed with a new computer program (ava...

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Bibliographic Details
Main Authors: János L. Lábár, Béla Pécz, Aiken van Waveren, Géraldine Hallais, Léonard Desvignes, Francesca Chiodi
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Nanomaterials
Subjects:
STEM
reciprocal space lattice fitting
free computer program
superconducting silicon
strain components
concentration of substitutional atom
Online Access:https://www.mdpi.com/2079-4991/13/6/1007

Internet

https://www.mdpi.com/2079-4991/13/6/1007

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