On Nanometer Ordering in thin Amorphous Hydrogenated Silicon
We investigated thin films of amorphous hydrogenated silicon (a-Si:H) deposited by PECVD under increasingdilutions of silane plasma by hydrogen. We found out that under increasing additional hydrogen at the depositions, thin filmsobtain less hydrogen bonded to silicon. The optical band gap energies...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2008-01-01
|
| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/85 |