Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics. The statistical switching parameters revealed the enhanced resistive switching performance in the bilayer Pt/TiO _2 /Co _3 O...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abd730 |